PART |
Description |
Maker |
2SB1184 2SB1185 2SB1243 A5800349 2SB1185F |
Power Transistor (-60V, -3A) From old datasheet system Power Transistor (-60V/ -3A)
|
Rohm
|
CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE. TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
|
Continental Device India Limited
|
CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 40V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 80V的五(巴西)总裁| 5A条一c)|11 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 10A条一(c)|10AC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)| TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五(巴西)总裁| 10A条一(c)|10AC
|
Serpac Electronic Enclosures Atmel, Corp. AUK, Corp.
|
IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
RFP3055LE RFD3055LESM RFD3055LE FN4044 RFD3055LESM |
11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs 11A 60V 0.107 Ohm Logic Level N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
2SC582509 |
Power transistor (60V, 3A)
|
Rohm
|
2SC582411 |
Power transistor (60V, 3A)
|
Rohm
|
2SB1565 |
Power Transistor (-60V, -3A)
|
ROHM[Rohm]
|
2SB1655 |
Power Transistor (-60V/ -3A)
|
ROHM
|